HY5PS1G831CFP-S6 DDR DRAM Mobile Flash Memory Chip 128MX8 0.4ns CMOS PBGA60 RoHS Compliant
Price:
Negotiation
MOQ:
1260PCS/BOX
Delivery Time:
3-5 work days
Product Description
HY5PS1G831CFP-S6 DDR DRAM Mobile Flash Memory Chip
High-performance 128MX8 DDR DRAM memory chip with 0.4ns speed, designed for mobile applications requiring reliable flash memory solutions.
Key Specifications
| Memory Configuration | 128MX8 |
| Speed | 0.4ns |
| Technology | CMOS |
| Package | PBGA60 |
| Voltage | VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V |
| Refresh Cycles | 8K cycles / 64ms |
Technical Features
- SSTL_18 interface compatibility for all inputs and outputs
- 8-bank architecture with single pulsed RAS operations
- Double data rate interface with differential clock inputs
- Source synchronous data transaction with bidirectional data strobe
- On-chip DLL for precise timing alignment
- Programmable CAS latency: 3, 4, 5, 6
- Programmable additive latency: 0-5
- Programmable burst length 4/8 with sequential and interleave modes
- Auto refresh and self refresh support
- On Die Termination and Off Chip Driver Impedance Adjustment
- Read Data Strobe support (x8 configuration)
- Self-Refresh High Temperature Entry capability
- RoHS compliant for environmental safety
Package Options
Available in JEDEC standard 60-ball FBGA (x4/x8) and 84-ball FBGA (x16) configurations with full strength driver options controlled by EMR.
Product Documentation
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Company
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location
ZHUOYUEHUI A2603 ZHUOYUEHUI CENTER PLAZA(SOUTH AREA) NO.126 ZHONGKANG ROAD MEIDU COMMUNITY MEILIN STREET
Contact Person
Carol