H5TC4G63CFR-PBAR DDR3L DRAM Memory Chip 4Gb 256Mx16 1.35V PBGA96 Module

Price Negotiable

Price: Negotiation

MOQ: one package

Delivery Time: Negotiable

Product Description

H5TC4G63CFR-PBAR DDR3 DRAM Memory Chip technical diagram

Product Overview

The H5TC4G63CFR-PBAR is a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM module, engineered for main memory applications requiring substantial memory density, high bandwidth, and efficient 1.35V operation.

Key Features

Low power DDR3L operation at 1.35V with 1.5V backward compatibility
High-performance synchronous operation with 8-bit prefetch architecture
Auto/self refresh capability for enhanced power management
Compact PBGA96 package measuring 13.0mm x 7.5mm x 1.2mm
Compliant with REACH, EU RoHS, and China RoHS standards

Technical Specifications

Parameter	Specification
Memory Density	4.294967296 Gbit
Organization	256M x 16
Operating Voltage	1.35V (1.283V - 1.45V range)
Package Type	PBGA-96 (TFBGA)
Package Dimensions	13.0mm x 7.5mm x 1.2mm
Terminal Pitch	0.8mm
Operating Temperature	0°C to 85°C
Peak Reflow Temperature	260°C (20 seconds max)
Technology	CMOS
Surface Mount	Yes

Performance Characteristics

This DDR3L SDRAM provides fully synchronous operations referenced to both rising and falling clock edges, with pipelined data paths and 8-bit prefetch architecture to deliver exceptional bandwidth for demanding memory applications.