Epithelial Construction Schottky Signal Diode With Surface Mount 10000 V/μS
Epithelial Construction Schottky Signal Diode With Surface Mount 10000 V/μS
Schottky Signal Diode Features
High switching frequency
High switching frequency
High efficiency and low power loss
High volume of current and good capability of surge current
Schottky Signal Diode Applications
- High frequency rectifier of switching mode power supplies
- Freewheeling diodes
- Polarity protection application
- DC-DC converters
Schottky Signal Diode Package
Schottky Signal Diode are available in both leaded and surface mount (sMD) packages. Schottky diodes in leaded packages are commonly used as high frequency, high current rectifier diodes, freewheeling diodes or protection diodes. It is available in single-tube and pair-tube (dual-diode) packages. Schottky has three types of pinouts for the tube, which has a common cathode (the cathode of the two tubes is connected), a common anode (the anode of the two tubes is connected), and a series (the anode of one diode is connected to the cathode of the other diode).
Schottky diodes with surface mount are available in single-tube, double-tube and triple-tube versions, with A~19 pinouts.
| Type: | Schottky Signal Diode | Package Type: | Surface Mount |
|---|---|---|---|
| Repetitive Peak Reverse Voltage: | 100V | Working Peak Reverse Voltage: | 100V |
| Maximum DC Blocking Voltage: | 100V | Peak Forward Surge Current: | 150A |
| Voltage Rate Of Change: | 10000 V/μs | Typical Thermal Resistance,Junction To Case: | 3 |
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | Ratings | Unit |
| VRRM |
Repetitive Peak Reverse Voltage |
100 | V |
| VRWM |
Working peak reverse voltage |
100 | V |
| VR |
Maximum DC blocking voltage |
100 | V |
| IF(AV) |
Maximum average forward rectified current Total device |
20 | A |
| IFSM |
Peak Forward Surge Current |
150 | A |
| Tj |
Operating junction temperature range |
-65~150 | ℃ |
| Tstg |
Storage temperature range |
-65~175 | ℃ |
Electrical characteristics
| Symbol | Parameters | Min | Typical | Max | Units | Conditions |
| IR |
Maximum Reverse Leakage Current (Note 1) |
-- | -- |
50 100 |
uA |
VR=VRRM TC = 25 °C TC = 125 °C |
|
VF
|
Maximum Instantaneous Forward Voltage(Note 2) |
-- |
0.55 0.58 |
0.60 0.70 |
V
|
IF= 10 A,TC = 25 °C IF= 20 A,TC = 25 °C |
| Rth(j-c) |
Typical Thermal Resistance,Junction to Case |
-- | -- | 3.5 | ℃/W | |
| dV/dt |
Voltage Rate of Change |
-- | -- | 10000 | V/μs |
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
Ratings and Characteristic curves
Figure 1. Forward Current Characteristics Figure 2. Reverrse Leakage Current
Figure 3. Junction Capacitance Figure 4. Power Derating
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