SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode
Features:
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | ±8 | ||
| Continuous Drain Current | ID | -2.2 | A | |
| IDM | -8 | ||
| Maximum Power Dissipation 2) | TA=25℃ | PD | 1.25 | W |
| TA=75℃ | 0.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ℃ | |
| Junction-to-Ambient Thermal Resistance (PCB mounted) 2) | RthJA | 100 | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) 3) | 166 | ℃/W | ||
Notes
1)Pulse width limited by maximum junction temperature.
2)Surface Mounted on FR4 Board, t ≤5 sec.
3)Surface Mounted on FR4 Board.
ELECTRICAL CHARACTERISTICS
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250uA | -20 | V | ||
| Drain-Source On-State Resistance1) | RDS(on) | VGS = -4.5V, ID = -2.8A | 105 | 130 | mΩ | |
| VGS = -2.5V, ID = -2.0A | 145 | 190 | ||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS ID = -250uA | -0.45 | v | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS = -0V | -1 | uA | ||
| VDS = -20V, VGS = -0V TJ=55℃ | -10 | |||||
| Gate Body Leakage | IGSS | VGS=±8v,VDS= 0V | ±100 | nA | ||
| Forward Transconductance 1) | gfs | VDS= -5V,ID= -2.8A | 6.5 | - | S | |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS = -6V, ID ≌ -2.8A | 5.8 | 10 | nC | |
| Gate-Source Charge | Qgs | 0.85 | ||||
| Gate-Drain Charge | Qgd | 1.7 | ||||
| Turn-On Delay Time | td(on) | VDD = -6V, RL=6Ω ID≌-1.A, VGEN = -4.5V | 13 | 25 | ns | |
| Turn-On Rise Time | tr | 36 | 60 | |||
| Turn-Off Delay Time | td(off) | 42 | 70 | |||
| Turn-Off Fall Time | tf | 34 | 60 | |||
| Input Capacitance | Ciss | | 415 | pF | ||
| Output Capacitance | Coss | 223 | ||||
| Reverse Transfer Capacitance | Crss | 87 | ||||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | IS = -1.6A, VGS = 0V | -1.6 | A | ||
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | ||
1)Pulse test: pulse width ≤300us, duty cycle≤2%
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