AO3400 SOT-23 Mosfet Power Transistor NPN MOSFET A09T N Channel Transistor
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor
Features:
- Model Number:AO3400
- Type:MOSFET
- Package Type:Surface Mount
- Product Name:AO3400
- Other name:AO3400A
- Marking:A09T
- FET Type:N-Channel
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) 25°C5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
- Vgs(th) (Max) Id:1.45V 250uA
- Gate Charge (Qg) (Max) Vgs: 7nC 4.5V
- Vgs (Max): ±12V
Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 30 | V |
| Gate-Source Voltage | VGS | ±12 | |
| Continuous Drain Current | ID | 5.8 | A |
|
|
IDM | 30 | |
| Power Dissipation | PD | 350 | mW |
| Junction Temperature | TJ | 150 | ℃ |
| Storage Temperature | TSTG | -55~+150 | ℃ |
Electrical Characteristics (TA=25°C, unless otherwise noted)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR) DSS | VGS = 0V, ID = -250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = -0V | 1 | uA | ||
| Gate Body Leakage | IGSS | VGS=±12v,VDS= 0V | ±100 | nA | ||
| On characteristics | ||||||
| Drain-Source On-State Resistance(NOTE 3) | RDS(on) | VGS = 10V, ID = 5.8A | 35 | mΩ | ||
| VGS = 4.5V, ID = 5A | 40 | |||||
| VGS = 2.5V, ID =4A | 52 | |||||
| Forward Transconductance 1) | gfs | VDS= 5V,ID= 5A | 8 | S | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS ,ID = 250uA | 0.7 | 1.4 | v | |
| Switching Characteristics (note 4,5) | ||||||
| Turn-On Delay Time | td(on) |
VDD = 10V, VDS=15V |
5 | ns | ||
| Turn-On Rise Time | tr | 7 | ||||
| Turn-Off Delay Time | td(off) | 40 | ||||
| Turn-Off Fall Time | tf | 6 | ||||
| Dynamic Characteristics (note 4,5) | ||||||
| Input Capacitance | Ciss |
|
1095 | pF | ||
| Output Capacitance | Coss | 99 | ||||
| Reverse Transfer Capacitance | Crss | 77 | ||||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode Forward Voltage(NOTE 3) | VSD | 1 |
V |
|||
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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