ES1A-ES1D SMA Ultra Fast High Voltage Diode 200V Surface Mount Silicon Material
S1A-ES1D SMA Ultra Fast Rectifier Diode 1A power rectifier diode 200V Surface Mount fast recovery rectifier diode
Features:
- For surface mount applications.
- Glass passivated junction.
- Low profile package
- Easy pick and place.
- Built-in strain relief.
- Super fast recovery times for high efficiency.
- Low switching losses, high efficiency
- High forward surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
- High forward surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Package: SMA (DO-214AC)
- Packing: tape in reel and 3000 to 7500 pieces/reel
- Terminals: matte tin plated leads
- Polarity: color band denotes cathode end
Typical applications:
For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
| Parameter | Symbol | ES1A | ES1B | ES1C | ES1D | Unit |
| Device marking code | EA | EB | EC | ED | ||
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 150 | 200 | V |
| Maximum average forward rectified current (fig. 1) | IF(AV) | 1.0 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave | IFSM | 30 | A | |||
| superimposed on rated load | TJ, Tstg | -55~+150 | ℃ | |||
| Parameter | Test conditions | Symbol | Value | Unit | |
| Maximum instantaneous forward voltage | IF = 0.6 A | VF (1) | 0.865 | V | |
| IF = 1.0 A | VF | 0.920 | |||
| Maximum DC reverse current at rated DC blocking voltage | TA=25℃ | IR | 5.0 | μA | |
| TA=100℃ | 100 | ||||
| Maximum reverse recovery time | IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A | trr | 15 | ns | |
| Maximum reverse recovery time | IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs,Irr = 10 % IRM
| TJ=25℃ | trr | 25 | ns |
| TJ=100℃ | 35 | ||||
| Maximum stored charge | IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs,Irr = 10 % IRM | TJ=25℃ | Qrr | 10 | nC |
| TJ=100℃ | 25 | ||||
| Typical junction capacitance | 4.0 V, 1 MHz | Cj | 10 | pF | |
Note
- Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
| Parameter | Symbol | ES1A | ES1B | ES1C | ES1D | Unit |
| Typical thermal resistance | RθJA (1) | 85 | ℃/W | |||
| RθJL(1) | 35 | |||||
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas.
Our Strict Quality Control:
1. Our quality controller has working in our factory for more than 10 years, very expericed.
2. We will test the each product, each accessory before shipping, to make sure its high quality.
3. We will pack the cargo well to make sure the goods in good status during delivery.
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