AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch
AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch
Description
The AP85N03NF uses advanced trench technology to provide excellent R DS(ON)
low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features
V DS = 30V I D =85 A R DS(ON) < 4mΩ @ V GS =10V
Application
Battery protection
Load switch
Uninterruptible power supply
DFN5*6-8L
N-Channel MOSFET
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1,6 | 85 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1,6 | 68 | A |
| IDM | Pulsed Drain Current2 | 216 | A |
| EAS | Single Pulse Avalanche Energy3 | 144.7 | mJ |
| IAS | Avalanche Current | 53.8 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 69 | W |
| PD@TA=25℃ | Total Power Dissipation4 | 5 | W |
| TSTG | Storage Temperature Range | -55 to 175 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 175 | ℃ |
| RθJA | Thermal Resistance Junction-Ambient 1 | 62 | ℃/W |
| RθJA | Thermal Resistance Junction-Ambient 1 (t ≤10s) | 25 | ℃/W |
| RθJC | Thermal Resistance Junction-Case1 | 1.8 | ℃/W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.0213 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | --- | 2.2 | 4 | mΩ |
| VGS=4.5V , ID=15A | --- | 4.8 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.73 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | |
| nA | ||||||
| gfs | Forward Transconductance | VDS=5V , ID=30A | --- | 26.5 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.4 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=15A | --- | 98 | --- | nC |
| Qgs | Gate-Source Charge | --- | 11 | --- | ||
| Qgd | Gate-Drain Charge | --- | 21 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A |
--- | 17 | --- | ns |
| ns | ||||||
| Tr | Rise Time | --- | 41 | --- | ns | |
| ns | ||||||
| Td(off) | Turn-Off Delay Time | --- | 55 | --- | ||
| ns | ||||||
| ns | ||||||
| Tf | Fall Time | --- | 66 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 5471 | --- | pF |
| pF | ||||||
| Coss | Output Capacitance | --- | 1628 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 1026 | --- | pF | |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 130 | A |
| A | ||||||
| ISM | Pulsed Source Current2,5 | --- | --- | 520 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =53.8A
4.The power dissipation is limited by 175℃ junction temperature
5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
6.Package limitation current is 85A.
For more information please refer to the attachment, or contact us:
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