800V Field Effect Transistor / N Channel Transistor 3N80 Mosfet ITO220
800V n channel transistor 3N80 mosfet ITO220 field effect transistor
20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET
High power transistor features:
- Excellent package for good heat dissipation
- Ultra low gate charge
- Low reverse transfer capacitance
- Fast switching capability
- Avalanche energy specified
The 3N80 provide excellent RDS(ON)low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.It used in power switching application.
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 800 | V |
| Gate-Source Voltage | VGS | ±30 | |
| Continuous Drain Current | ID | 3 | A |
|
Pulsed Drain Current |
IDM | 10 | |
| Single Pulsed Avalanche Energy (note1) |
EAS
|
170 |
mJ
|
| Thermal Resistance from Junction to Ambient |
RθJA
|
62.5 |
℃/W
|
| Junction Temperature | TJ | 150 |
℃
|
| Storage Temperature Range | TSTG | -55~+150 | |
|
Maximum lead temperature for soldering purposes , 1/8”from case for 5 seconds |
TL
|
260 |
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR) DSS | VGS = 0V, ID = -250uA | 800 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 800V, VGS = 0V | 1 | uA | ||
| Gate Body Leakage | IGSS | VGS=±30v,VDS= 0V | ±100 | nA | ||
| On characteristics (note 2) | ||||||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10V, ID = 1.5A | 4.2 | mΩ | ||
| Forward Transconductance 1) | gfs | VDS=1 5V,ID= 1.5A | 2.1 | S | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS ,ID = 250uA | 3 | 4.5 | v | |
| Switching Characteristics (note 2,3) | ||||||
| Turn-On Delay Time | td(on) |
VDD = 400V, VDS=10V RG=4.7Ω,RG = 3A |
17 | ns | ||
| Turn-On Rise Time | tr | 27 | ||||
| Turn-Off Delay Time | td(off) | 36 | ||||
| Turn-Off Fall Time | tf | 40 | ||||
| Total Gate Charge | Qg |
VDS =640V,VGS =10V,ID =3A
|
19 | nC | ||
| Gate-Source Charge | Qgs | 32 | nC | |||
| Gate-Drain Charge | Qgd | 10.8 | nC | |||
| Dynamic Characteristics (note 3) | ||||||
| Input Capacitance | Ciss |
VDS = 25V, VGS = 0V f = 1 MHz
|
485 | pF | ||
| Output Capacitance | Coss | 57 | ||||
| Reverse Transfer Capacitance | Crss | 11 | ||||
| Drain-source diode characteristics and maximum ratings | ||||||
| Drain-source diode forward voltage | VSD | VGS = 0V, IS =3A | 1.6 | V | ||
|
Continuous drain-source diode forward current
|
IS
|
3 | A | |||
|
Pulsed drain-source diode forward current
|
ISM
|
10 | A | |||
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