100V 200mA SOT-23 High Voltage Switching Diode / BAS19 CJ High Speed Switching Diode
100V 200mA SOT-23 high voltage Switching Diode BAS19 CJ high speed switching diode in stock
High speed diode general description:
- High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.
SMD switching diode features:
- High switching speed: trr ≤ 50 ns
- Low leakage current
- Reverse voltage VR ≤ 100 V
- Low capacitance: Cd ≤ 5 pF
- Small SMD plastic package
High speed switching diode applications:
- High-speed switching at high voltage
- High-voltage general-purpose switching
- Voltage clamping
- Reverse polarity protection
|
Pin
|
Symbol
|
Description
|
| 1 |
A
|
anode
|
| 2 |
n.c.
|
not connected
|
| 3 | K |
cathode
|
Absolute Maximum Rating
|
Symbol
|
Parameter
|
Conditions M
|
Max
|
Unit
|
|
VRRM
|
repetitive peak reverse voltage
|
120 | V | |
|
VR
|
reverse voltage
|
100 | V | |
|
IF
|
forward current
|
continuous
|
200 | mA |
|
IFSM
|
non-repetitive peak forward current
|
tp = 1 µs; Tj(init) = 25 °C; square wave
|
9 | A |
|
tp = 100 µs; Tj(init) = 25 °C; square wave
|
3 | A | ||
|
tp = 10 ms; Tj(init) = 25 °C; square wave
|
1.7 | A | ||
|
IFRM
|
repetitive peak forward current
|
625 | mA | |
|
Ptot
|
total power dissipation
|
Tamb ≤ 25 °C
|
250 | mW |
|
Tj
|
junction temperature
|
150 |
℃
|
|
|
Tamb
|
ambient temperature
|
-55 -150
|
℃ | |
|
Tstg
|
storage temperature
|
-65 -150
|
℃ |
|
Symbol
|
Parameter
|
Conditions M
|
Max
|
Unit
|
|
VF
|
forward voltage
|
IF = 100 mA; Tj = 25 °C
|
1 | V |
|
IF = 200 mA; Tj = 25 °C
|
1.25 | V | ||
|
IR
|
reverse current
|
VR = 100 V; Tj = 25 °C
|
100 | nA |
|
VR = 100 V; Tj = 150 °C
|
100 |
µA
|
||
|
Cd
|
diode capacitance
|
VR = 0 V; f = 1 MHz; Tamb = 25 °C
|
5 |
pF
|
|
trr
|
reverse recovery time
|
IF = 30 mA; IR = 30 mA; RL = 100 Ω; IR(meas) = 3 mA; Tamb = 25 °C
|
50 | ns |
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