NCE N Channel Enhancement Mode Power MOSFET NCE30H10K TO-252 package
Price:
usd 0.2/pcs
MOQ:
2500PCS
Delivery Time:
3-5 days
Brand:
NCE
Product Description
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor
N channel transistor features
- VDS =30V,ID =100A
- RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- The NCE30H10K uses advanced trench technology and
- design to provide excellent RDS(ON) with low gate charge. It
- can be used in a wide variety of applications.
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 800 | V |
| Gate-Source Voltage | VGS | ±30 | |
| Continuous Drain Current | ID | 100 | A |
| IDM | 400 | |
Maximum Power Dissipation | PD | 110 | W |
Single pulse avalanche energy ( | EAS | 350 | mJ |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ℃ |
Electrical Characteristics (TA=25°C, unless otherwise noted)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR) DSS | VGS = 0V, ID = -250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = -0V | - | - | 1 | uA |
| Gate Body Leakage | IGSS | VGS=±12v,VDS= 0V | - | - | ±100 | nA |
| On characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS ,ID = 250uA | 1 | 1.6 | 3 | v |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | - | 4.0 | 5.5 | mΩ |
| Forward Transconductance | gfs | VDS= 10V,ID= 20A | 50 | - | - | S |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 15V, ID=60A | - | 11 | - | ns |
| Turn-On Rise Time | tr | - | 160 | - | ||
| Turn-Off Delay Time | td(off) | - | 25 | - | ||
| Turn-Off Fall Time | tf | - | 60 | - | ||
Total Gate Charge | Qg | VDS=15V,ID=30A, | 70 | nC | ||
Gate-Source Charge | Qgs | 8.8 | ||||
Gate-Drain Charge | Qgd | 16.3 | ||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | | 3400 | pF | ||
| Output Capacitance | Coss | 356 | ||||
| Reverse Transfer Capacitance | Crss | 308 | ||||
| Drain-source diode characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | - | 1.2 | V |
| Diode Forward Current | IS | - | - | - | 100 | A |
| Reverse Recovery Time | trr | Tj=25℃,Isd=60A, | - | 56 | - | ns |
| Reverse Recovery Charge | Qrr | - | 110 | - | nC | |
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Company
Shenzhen Canyi Technology Co., Ltd.
Location
Room 4005, Floor 40th, Saige Square, Huaqiang North Road NO.1002, Futian District, Shenzhen, Guangdong, China
Contact Person
Lisa