LaAlO3 Lanthanum Aluminate Single Crystal Substrate 76.2mm for HTS and GMR Thin Films

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance