LGS Series Electro-Optic Q-Switch Pockels Cell with 3200nm Wavelength Range and 900MW/cm² Damage Threshold
The LGS Series Electro-optic Q-switch Pockels Cell utilizes innovative La3Ga5SiO14 (LGS) crystal technology, offering superior performance for medium output energy laser systems. This advanced NLO material provides exceptional damage resistance and thermal stability.
LGS crystal features an extremely high damage threshold (approximately 9 times higher than LN), excellent electro-optic coefficients, and superior temperature stability compared to quartz. The unique design ensures zero total rotation angle of the polarization plane during bidirectional propagation through the Pockels cell.
| Property | Specification |
|---|---|
| Chemical Formula | La3Ga5SiO14 |
| Crystal Structure | Trigonal; a=b=7.453Å, c=6.293Å |
| Density | 5.75 g/cm³ |
| Melting Point | 1470°C |
| Transparency Range | 242 - 3200 nm |
| Refractive Index | 1.89 |
| Electro-Optic Coefficients | γ41=1.8 pm/V, γ11=2.3 pm/V |
| Resistivity | 1.7×1010 Ω·cm |
| Deliquescence | No |
| Thermal Expansion Coefficients | α11=5.15×10-6 /K (⊥Z-axis) α33=3.65×10-6 /K (∥Z-axis) |
- LGS-based Q-switch Pockels cell for superior performance
- Wavelength compatibility up to 3.2μm for broad application
- Transmitted Wave Front Distortion: for precision optics
- Damage threshold: >900 MW/cm² (@1064nm, 10ns, typical)
- Ideal replacement for DKDP and LiNbO3 series Q-switches in medium power laser systems
This practical electro-optic device is specifically designed for medium output energy lasers, providing reliable performance in electro-optic modulators, Q-switches, and other precision optical components where high damage threshold and thermal stability are critical requirements.
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