Square <100> LaAlO3 Optical Substrate Target with 3.79Å Crystal Structure and 2080°C Melting Point
Square Low Microwave Loss Optical Substrate Lanthanum Aluminate (LaAlO3) Target is a high-temperature superconducting single crystal substrate engineered for advanced thin film applications. This material serves as an exceptional substrate for epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films, with dielectric properties optimized for low-loss microwave and dielectric resonance applications.
- High-temperature superconductors, magnetic and ferro-electric thin films
- Low-loss microwave applications
- Dielectric resonance applications
- Excellent lattice match to most materials with Perovskite structure
- Low dielectric constant of ~25
- Ultra-low microwave loss with loss tangent of ~3×10⁻⁴ at 300K
| Property | Value |
|---|---|
| Crystal Structure | Cubic a=3.79 Angstroms |
| Growth Method | Czochralski |
| Density | 6.52 g/cm³ |
| Melting Point | 2080°C |
| Thermal Expansion | 10 × 10⁻⁶/°C |
| Dielectric Constant | ~25 |
| Loss Tangent at 10 GHz | ~3×10⁻⁴ @ 300K, ~0.6×10⁻⁴ @ 77K |
| Color and Appearance | Transparent to Brown based on annealing condition, visible twins on polished substrate |
| Chemical Stability | Insoluble in mineral acids at 25°C, soluble in H₃PO₃ at >150°C |
This LaAlO3 substrate delivers superior performance with its low dielectric constant of ~25 and exceptionally low microwave loss characteristics, making it ideal for high-frequency applications requiring minimal signal degradation.
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