Round LaAlO3 Wafer Optical Substrate - 3.79Å Cubic Structure, 2080°C Melting Point, Double Side Polished

Price Negotiable

Price: Negotiable

MOQ: 1pc

Delivery Time: 3-4 weeks

Brand: Crystro

Product Description

Round LaAlO3 Wafer Optical Substrate

LaAlO3 is a high-temperature superconducting single crystal substrate ideal for epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its exceptional dielectric properties make it suitable for low-loss microwave and dielectric resonance applications.

Key Applications

Electronic devices and components
Catalysis and chemical processing
High-temperature fuel cells
Advanced ceramics manufacturing
Wastewater treatment systems
Substrate materials for thin film deposition

Primary Advantages

Small dielectric constant (~25)
Low dielectric loss (3×10⁻⁴ @ 300K)
Excellent lattice matching with perovskite structures
Small thermal expansion coefficient (10×10⁻⁶/°C)
Superior chemical stability
Wide energy gap characteristics
Large specific surface area
Good thermal stability up to 2080°C melting point

Physical Properties

Property	Value
Crystal Structure	Cubic a=3.79 Å
Growth Method	Czochralski
Density	6.52 g/cm³
Melting Point	2080°C
Thermal Expansion	10×10⁻⁶/°C
Dielectric Constant	~25
Loss Tangent at 10 GHz	~3×10⁻⁴ @ 300K, ~0.6×10⁻⁴ @77K
Color and Appearance	Transparent to Brown based on annealing condition
Chemical Stability	Insoluble in mineral acids at 25°C, soluble in H₃PO₃ at >150°C

Technical Specifications

This double-side polished LaAlO3 wafer features orientation with visible twins on polished substrate surfaces, making it ideal for high-pressure experimental phases and advanced research applications.