Electro Optic 32um Langasite Pockel Cell Q Switch - 3.2μm Wavelength, 900MW/cm² Damage Threshold
This innovative electro-optic Q-switch utilizes La3Ga5SiO14 (LGS) crystal technology, offering superior performance characteristics for demanding laser applications. The LGS crystal represents a significant advancement in nonlinear optical materials with exceptional damage resistance and thermal stability.
| Property | Value |
|---|---|
| Chemical Formula | La3Ga5SiO14 |
| Crystal Structure | Trigonal; a=b=7.453Å, c=6.293Å |
| Density | 5.75 g/cm³ |
| Melting Point | 1470°C |
| Transparency Range | 242 - 3200 nm |
| Refractive Index | 1.89 |
| Electro-Optic Coefficients | γ41=1.8 pm/V, γ11=2.3 pm/V |
| Resistivity | 1.7×1010 Ω·cm |
| Thermal Expansion Coefficients | α11=5.15×10-6/K (⊥Z-axis) α33=3.65×10-6/K (∥Z-axis) |
- Operates at wavelengths up to 3.2μm
- Transmitted Wave Front Distortion: < λ/4
- Damage threshold: >900 MW/cm² @1064nm, 10ns
- Excellent temperature stability superior to quartz
- Non-deliquescent crystal material
- Suitable replacement for DKDP and LiNbO3 Q-switches
- Ideal for medium power laser systems
The LGS electro-optic Q-switch operates with light propagation along the Z-axis and electric field application along the X-axis, maximizing the crystal's lateral electro-optic effect. This rotation-electro-optical design ensures zero total rotation angle of the polarization plane during bidirectional propagation, making it highly effective for Q-switching applications in electro-optic modulators and laser systems.
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