LaAlO3 Single Crystal Substrate for High-Temperature Superconductors - 3.79 Angstrom Cubic Structure, 2080°C Melt Point
LaAlO3 is a high-temperature superconducting single crystal substrate engineered for advanced electronic applications. This premium substrate material enables epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films, with dielectric properties optimized for low-loss microwave and dielectric resonance applications.
Crystro maintains a professional team with over 15 years of production experience and invests significantly in crystal R&D annually to enhance product performance and develop innovative crystal solutions.
| Property | Value |
|---|---|
| Crystal Structure | Cubic a=3.79 Angstroms |
| Growth Method | Czochralski |
| Density | 6.52 g/cm³ |
| Melt Point | 2080°C |
| Thermal Expansion | 10 × 10⁻⁶/°C |
| Dielectric Constant | ~25 |
| Loss Tangent at 10 GHz | ~3×10⁻⁴ @ 300K, ~0.6×10⁻⁴ @77K |
| Color and Appearance | Transparent to Brown based on annealing condition. Visible twins on polished substrate |
| Chemical Stability | Insoluble in mineral acids at 25°C and soluble in H₃PO₃ at >150°C |
- High Temperature Superconducting thin films
- Giant magnetic thin films
- Advanced electronic devices
- High temperature fuel cells
- Small dielectric constant (~25)
- Low dielectric loss (3×10⁻⁴ @ 300K)
- Excellent lattice matching with perovskite structures
- Small thermal expansion coefficient (10 × 10⁻⁶/°C)
- Superior chemical stability
- Wide energy gap
- Large specific surface area
- Enhanced thermal stability up to 2080°C
LaAlO3 single crystal provides optimal lattice match for materials with perovskite structure, making it an exceptional substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films.
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