JUYI 500V/8A N Channel Enhancement Mode Power MOSFET
Price:
Negotiable
MOQ:
10set
Delivery Time:
5-8 working days
Brand:
JUYI
Product Description
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET
GENERAL DESCRIPTION
The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
FEATURES
● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation
APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
PIN DESCRIPTION
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
|
Symbol
|
Parameter
|
Limit
|
Unit | |
|
VDS
|
Drain-Source Voltage
|
500
|
V | |
|
VGS
|
Gate-Source Voltage
|
±30 | V | |
|
ID
|
Continuous Drain
Current
|
Tc=25ºC
|
8 | A |
|
Tc=100ºC
|
4.8 | |||
|
IDM
|
Pulsed Drain Current
|
30 | A | |
|
PD
|
Maximum Power Dissipation
|
80 | W | |
|
TJ TSTG
|
Operating Junction and Storage Temperature Range
|
-55+150
|
ºC | |
|
RθJC
|
Thermal Resistance-Junction to Case
|
1.56 |
℃/W
|
|
Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
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Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Shanghai Juyi Electronic Technology Development Co., Ltd
Location
No. 1, lane 1199, yunping road, jiading district, Shanghai,China
Contact Person
Lisa Jiang