The JY213H is a high-speed power MOSFET and IGBT driver featuring three independent high-side and low-side output channels for three-phase gate driving applications. The chip integrates built-in dead time and shoot-through protection, effectively preventing damage to the half-bridge circuit. To avoid damage to the power devices caused by low supply voltage operation, an internal undervoltage lockout (UVLO) circuit is included.

With advanced high-voltage BCD process technology and built-in common-mode noise cancellation, the high-side driver can operate stably even in high dv/dt noise environments.

• Integrated 600V three-phase half-bridge high-side and low-side drivers
• Built-in dead time
• Integrated shoot-through protection
• Undervoltage lockout (UVLO) for both high-side and low-side drivers
• Compatible with 3.3V, 5V, and 15V logic levels
• Dead time: 0.1 μs (typ.)
• Excellent dv/dt common-mode noise immunity
• Capable of withstanding negative transient voltages
• Operating temperature range: -40°C to 125°C

• Brushless DC motor (BLDC) drive systems
• Other three-phase inverter applications