12inch SiC Wafer Silicon Carbide Wafer 300mm Substrate 750±25um 4H-N Type Orientation 100 Production Research Grade

12inch SiC wafer Silicon Carbide wafer 300mm 750±25um 4H-N type orientation 100 Production Research grade

12inch SiC wafer's abstract

This 12-inch Silicon Carbide (SiC) wafer is designed for advanced semiconductor applications, featuring a 300mm diameter, 750±25µm thickness, and a 4H-N type crystal orientation with a polytype of 4H-SiC. The wafer is produced using high-quality manufacturing techniques to meet the standards of research-grade and production environments. Its robust properties make it well-suited for high-power, high-temperature, and high-frequency devices, often used in applications such as electric vehicles (EVs), power electronics, and RF technology. The wafer’s superior structural integrity and precise specifications ensure high yields in device fabrication, offering optimal performance in cutting-edge research and industrial applications.

12inch SiC wafer's data chart

12inch SiC wafer's photo

12inch SiC wafer's properties

1. Material Properties of SiC:

• Wide Bandgap: SiC has a wide bandgap (~3.26 eV), allowing it to operate at higher voltages, temperatures, and frequencies compared to traditional silicon (Si).
• High Thermal Conductivity: SiC's thermal conductivity is much higher than silicon (about 3.7 W/cm·K), making it well-suited for high-power applications where heat dissipation is critical.
• High Breakdown Voltage: SiC can handle much higher voltages (up to 10 times higher than silicon), making it ideal for power electronics, such as power transistors and diodes.
• High Electron Mobility: The electron mobility in SiC is higher than in traditional silicon, contributing to faster switching times in electronic devices.

2. Mechanical Properties:

• High Hardness: SiC is very hard (Mohs hardness of 9), which contributes to its wear resistance but also makes it difficult to process and machine.
• Stiffness: It has a high Young's modulus, meaning it is stiffer and more durable compared to silicon, which enhances its robustness in devices.
• Brittleness: SiC is more brittle than silicon, which is important to consider during wafer processing and device manufacturing.

12inch SiC wafer's applications

12-inch SiC wafers are primarily used in high-performance power electronics, including power MOSFETs, diodes, and IGBTs, enabling efficient energy conversion in industries such as electric vehicles, renewable energy, and industrial power systems. SiC’s high thermal conductivity, wide bandgap, and ability to withstand high temperatures make it ideal for applications in automotive electronics, power inverters, and high-power energy systems. Its use in high-frequency RF devices and microwave communication systems also makes it critical for telecommunications, aerospace, and military radar systems.

Additionally, SiC wafers are used in LED and optoelectronics, serving as substrates for blue and UV LEDs, which are crucial for lighting, displays, and sterilization. The material's resilience in harsh environments enables its use in high-temperature sensors, medical devices, and satellite power systems. With its growing role in smart grids, energy storage, and power distribution, SiC is helping to improve efficiency, reliability, and performance across a wide range of applications.

12inch SiC wafer's Q&A

1. What is a 12-inch SiC wafer?

Answer: A 12-inch SiC wafer is a silicon carbide (SiC) substrate with a diameter of 12 inches, primarily used in the semiconductor industry, especially for high-power, high-temperature, and high-frequency applications. SiC materials are widely used in power electronics, automotive electronics, and energy conversion devices due to their excellent electrical, thermal, and mechanical properties.

2. What are the advantages of a 12-inch SiC wafer?

Answer: The advantages of a 12-inch SiC wafer include:

• High Temperature Stability: SiC can operate at temperatures up to 600°C or higher, offering better high-temperature performance than traditional silicon materials.
• High Power Handling: SiC can withstand high voltage and current, making it suitable for high-power applications such as electric vehicle battery management and industrial power supplies.
• High Thermal Conductivity: SiC has a significantly higher thermal conductivity compared to silicon, which helps in better heat dissipation, improving device reliability and efficiency.