8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED
8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application
GaN Wafer Characteristic
- III-Nitride(GaN,AlN,InN)
Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is
a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.
Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.
Application
GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.
- Laser Projection Display, Power Device, etc. Date storage
- Energy-efficient lighting Full color fla display
- Laser Projecttions High- Efficiency Electronic devices
- High- Frequency Microwave Devices High-energy Detection and imagine
- New energy solor hydrogen technology Environment Detection and biological medicine
- Light source terahertz band
Product specification
| Items | Values/Scope |
| Substrate | Si |
| Wafer diameter | 4” / 6” / 8” |
| Epi-layer thickness | 4-5 μm |
| Wafer bow | <30 μm, Typical |
| Surface Morphology | RMS<0.5nm in 5×5 μm² |
| Barrier | AlXGa1-XN, 0<X<1 |
| Cap layer | In-situ SiN or GaN (D-mode); p-GaN (E-mode) |
| 2DEG density | >9E12/cm2 (20nm Al0.25GaN) |
| Electron mobility | >1800 cm2/Vs (20nm Al0.25GaN) |
Prodcut Specification
| Items | Values/Scope |
| Substrate | HR_Si / SiC |
| Wafer diameter | 4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si |
| Epi-layer thickness | 2-3 μm |
| Wafer bow | <30 μm, Typical |
| Surface Morphology | RMS<0.5nm in 5×5 μm² |
| Barrier | AlGaN or AlN or InAlN |
| Cap layer | In-situ SiN or GaN |
| Items | GaN-on-Si | GaN-on-Sapphire |
| 4”/ 6”/ 8” | 2”/ 4”/ 6” | |
| Epi-layer Thickness | <4 μm | <7 μm |
| Average Dominant/ Peak Wavelength | 400-420nm, 440-460nm, 510-530nm | 270-280nm, 440-460nm, 510-530nm |
| FWHM |
<20nm for Blue/Near-UV <40nm for Green |
<15nm for UVC <25nm for Blue <40nm for Green |
| Wafer Bow | <50 μm | <180 μm |
ABOUT OUR OEM Factory
Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.
-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.
Q: How to pay?
100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.
Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.