Gate Drive Transformer For IGBT​ , High Frequency Transformer

Gate dirve transformers for IGBT need to ensure excebehavior as well as safe galvanic separation betweer voltage side

Turns ratio:   1:1.2:1.2

Inductance:   1.4mH Typ.@100KHz

Leakage inductance:         0.3uH Ref@100KHz

Coupling capacitance:         12pF Pri to Sec

Power:     3W

FEATURES:

• Developed for 1200 V IGBT applications
• Low coupling capacitance
• High insulation strength(reinforced insulation)
• Very high corona extinction voltage
• Compact designs in THT and SMT casings
• Large voltage time area in extremely compact design
• Very low leakage inductance

Applications:

• Renewables(i.e. solar inverters, converters for wind turbines or grid connection)
• Power supplies for welding equipment
• Uninterruptable power supplies(UPS)
• Medical devices such as X-rays and laser

ABOUT US:

Shinhom Enterprise was founded in Xi'an China with nearly 20 years of experiencing of designing & manufacturing transformers & Coils components.
High quality, low cost and best service are what we pursuit most!
Meanwhile, the certification of ISO 9001 by SGS system was also earned.
Shinhom is to remain a specialist in designing and manufacturing high-performance transformers,power inductors, choke coils power supplies for purchasers around the world.