1310nm O Band Bright Mems Variable Optical Attenuator Mems VOA 5V FC / APC
MEMS VOA is based on a micro-electro-mechanical system. Inside the MEMS VOA, a MEMS chip with a tilting mirror on the silicon is seated and wire bonded to the pins. A voltage applied to MEMS chip can causes the mirror to rotate, which changes the coupling of light between the input fiber and output fiber, thus the desired attenuation amount. MEMS VOA achieves highly repeatable optical attenuation over C or L Band. It gives Unifiber's VOA an advantage in WDM, VMUX/DEMUX, EDFA and optical network protection applications.
Features:
Specification
| Parameter | Specification | Unit | Note |
|
Wavelength Range |
1064 | nm | |
| 1310 | nm | O Band | |
| 1530~1570 | nm | C band | |
| 1570~1610 | nm | L band | |
| Attenuation Type | Bright or Dark | - | |
| Attenuation Range | ≥30 | dB | For Single Mode |
| Blocking state Attenuation) | ≥40 | dB | Dark Type |
| Insertion Loss | ≤0.7 | dB | For Single Mode |
| Attenuation Resolution | Continuous | - | |
| Wavelength Dependent Loss | ≤0.3 | dB | @<0 dB Att. |
| ≤1.5 Typical 0.8 | dB | @<20 dB Att. | |
| Polarization Dependent Loss | 0.1 | dB | @<0 dB Att. |
| 0.5 | dB | @<20 dB Att. | |
| Temperature Dependent Loss | ≤0.7 | dB | @<0 dB Att. compare with RT |
| ≤1.0 | dB | @<20 dB Att. compare with RT | |
| Return loss | ≥45 | dB | For Single Mode |
| Respnse Time | ≤2 | ms | 10-90%optical power |
| Optical Power Handing | 500 | mW | |
| Driving Voltage | 6.5 or 15 | V | |
| Power Consumption | ≤2 | mW | |
| Operation Temperature | 0~70 | ℃ | |
| Storage Temperature | -40~85 | ℃ |
Notes: 1. Specified without connectors. 2. Add an additional 0.2dB loss per connector.
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