ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA
ER1A ER1B ER1C ER1D ER1E ER1G ER1J Fast Recorvery Diode Fast Switching Diode DO-214AC SMA
| Type | Package | VRRM(V) | IO(A) | IFSM(A) | Trr(ns) | VF(V) | IR(uA) |
| ER1A | SMA | 50 | 1 | 30 | 35 | 0.95 | 5 |
| ER1B | SMA | 100 | 1 | 30 | 35 | 0.95 | 5 |
| ER1C | SMA | 150 | 1 | 30 | 35 | 0.95 | 5 |
| ER1D | SMA | 200 | 1 | 30 | 35 | 0.95 | 5 |
| ER1E | SMA | 300 | 1 | 30 | 35 | 1.25 | 5 |
| ER1G | SMA | 400 | 1 | 30 | 35 | 1.25 | 5 |
| ER1J | SMA | 600 | 1 | 30 | 35 | 1.7 | 5 |
Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.
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