China Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J for sale

Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J

Price Negotiable

Price: negotiable

MOQ: 100PCS

Delivery Time: 1-2 WORK DAYS

Brand: THINKCHIP

Product Description

ES2A ES2B ES2C ES2D ES2E ES2G ES2J Fast Recorvery Diode SMB DO-214AA

Type

Package

VRRM(V)

IO(A)

IFSM(A)

Trr(ns)

VF(V)

IR(uA)

ES2A	SMB	50	2	50	35	0.95	5
ES2B	SMB	100	2	50	35	0.95	5
ES2C	SMB	150	2	50	35	0.95	5
ES2D	SMB	200	2	50	35	0.95	5
ES2E	SMB	300	2	50	35	1.25	5
ES2G	SMB	400	2	50	35	1.25	5
ES2J	SMB	600	2	50	35	1.7	5

ER2A	SMB	50	2	50	35	0.95	5
ER2B	SMB	100	2	50	35	0.95	5
ER2C	SMB	150	2	50	35	0.95	5
ER2D	SMB	200	2	50	35	0.95	5
ER2E	SMB	300	2	50	35	1.25	5
ER2G	SMB	400	2	50	35	1.25	5
ER2J	SMB	600	2	50	35	1.7	5

Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.