12-inch Aluminum Nitride Ceramic Substrate for GaN-on-QST Applications - 10mm Thickness, 330MPa Strength
This 12-inch Aluminum Nitride (AlN) Ceramic Substrate utilizes GaN-on-QST technology developed by Qromis, providing an advanced foundation for semiconductor applications. The substrate serves as both silicon substrate and seed crystal, enabling high-performance device manufacturing.
Qromis collaborated with Kyma Technologies to produce the first free-standing GaN substrate (4 inches) based on QST technology. With investment from Toyota Motor Corporation and licensing to World Advanced and Shin-Etsu Chemical, this technology supports accelerated epitaxy and device foundry production.
- GaN device yield rates up to 90%
- Available in 6-inch and 8-inch sizes
- 12-inch AlN substrates planned for 2025 production
| Property | Value |
|---|---|
| Dielectric Constant | 9 |
| Volume Resistivity | >10¹⁴ Ω·cm |
| Flexural Strength | ≥330 MPa |
| Density | 3.3 g/cm³ |
| Surface Roughness | Ra ≤6 μm |
| Thickness | 10 mm |
| Arc Resistance | >30 minutes |
| Thermal Expansion | 4.5-5.5×10⁻⁶/K |
| Hardness | HV1500 |
Efficient heat transfer capability makes AlN ceramic ideal for thermal management in electronic devices and high-temperature environments.
With flexural strength ≥330 MPa, these substrates withstand high-pressure industrial conditions without cracking.
Dielectric constant of 9 and volume resistivity >10¹⁴ Ω·cm provide excellent electrical isolation for sensitive components.
High temperature resistance and corrosion resistance ensure reliable performance in harsh chemical and thermal environments.
Advanced machining techniques ensure dimensional accuracy and surface quality meeting stringent industrial requirements.
- GaN-on-QST semiconductor substrates
- High-power electronic components
- Thermal management systems
- Aerospace and automotive electronics
- Industrial heating elements and furnace components
- Precision structural parts requiring high thermal and electrical performance
Wuxi Special Ceramic offers comprehensive customization services for AlN ceramic components, including:
- Custom sizes and dimensional specifications
- Specialized surface finishes and roughness requirements
- Enhanced material properties for specific applications
- Multiple color options beyond standard gray
Aluminum Nitride Ceramic is an advanced ceramic material with exceptional thermal conductivity, high electrical insulation, and superior mechanical strength.
Common applications include electronics, automotive systems, aerospace components, and military equipment where high thermal and electrical performance is critical.
Its combination of high thermal conductivity and excellent electrical insulation makes it ideal for heat sink applications in electronic devices and high-temperature environments.
Yes, Aluminum Nitride Ceramic has a melting point exceeding 2200°C, making it suitable for extreme temperature applications.
Yes, with volume resistivity >10¹⁴ Ω·cm and dielectric constant of 9, it provides excellent electrical insulation for high-voltage applications.
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