40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M
General Description:
Features:
The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Applications:
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
PIN Description:
Absolute Max Ratings(Tc=25℃ Unless Otherwise Noted)
| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 40 | V | |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Continuous Drain Current | Tc=25℃ | 80 | A |
| Tc=100℃ | 55 | |||
| IDM | Pulsed Drain Current | 350 | A | |
| PD | Maximum Power Dissipation | 80 | W | |
| TJTSTG | Operating Junction and Storage Temperature Range | -55~+175 | ℃ | |
| RΘJC | Thermal Resistance-Junction to Case | 1.88 | ℃/W | |
| RΘJA | Thermal Resistance-Junction to Ambient | 92 | ||
Package Outline:
| Symbol | Dimensions in Millimeters | Dimensions in inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 0.483TYP. | 0.190 TYP. | ||
| E | 6.000 | 6.2000 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 TYP | 0.114 TYP. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 TYP | 0.063 TYP. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| ø | 1.100 | 1.300 | 0.043 | 0.051 |
| Θ | 0° | 8° | 0° | 8° |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| v | 5.350 TYP. | 0.211 TYP. | ||
For More products information, please directly contact with us via email: ivanzhu@junqitrading.com
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