Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
Mos Field Effect Transistor Description
Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names.
Mos Field Effect Transistor Feature
N- Channel P - Channel
Vds = 30V Vds = -30V
9.5 A (Vgs= 10V) - 8 A (Vgs= -10V)
12.9 mΩ (Vgs= 10V) 21.6 mΩ (Vgs= -10V)
19.3 mΩ (Vgs= 4.5V) 40.0 mΩ (Vgs= -4.5V)
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
Mos Field Effect Transistor Applications
Synchronous Rectifiers
Wireless Power
H-bridge Motor Drive
Ordering and Marking Information
S
G170C03
XYMXXXXXX
Package Code
S: SOP8L
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.
Absolute Maximum Ratings
N-Mosfet Typical Operating Characteristics
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