GB3-A1DPS 1100nm Photo Switch Sensor with 0.1μA Dark Current and 850nm Peak Sensitivity

Price Negotiable

Price: Negotiable

MOQ: 1000 Pieces

Delivery Time: 7-10 Workdays

Brand: AMPFORT

Product Description

GB3-A1DPS Visible to Near IR Photo Sensor Overview

The GB3-A1DPS is a RoHS compliant visible to near infrared detector featuring a plastic package design. This photo sensor provides spectral response in the 400-1100nm range with peak sensitivity at 850nm, offering superior performance with minimal output-current fluctuations compared to conventional phototransistors and CdS photoconductive cells.

Key Features

Easy operation similar to phototransistor functionality
Low output-current fluctuations for stable performance
Excellent linearity with consistent current output across illumination levels
Minimal tolerance variation across different color temperature light sources
Low dark current (0.1μA max) with high photo sensitivity
RoHS compliant, cadmium-free alternative to traditional photocells

Applications

Interior and exterior light switching (dusk/dawn applications)
Light control and dimming systems
Automotive headlight dimmer controls
Display contrast adjustment
Colorimeters and optical measurement devices
Direct replacement for CdS photocells in existing systems

Absolute Maximum Ratings (Ta=25°C)

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	12	V
Emitter-Collector Voltage	VEOC	5	V
Power Dissipation	Pc	70	mW
Storage Temperature	Topr	-25~85	°C
Soldering Temperature	Tstg	-40~+100	°C

Electro-Optical Characteristics (Ta=25°C)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Spectral response range	λp	/	-	850	-	nm
Peak sensitivity wavelength	λd	/	400	-	1100	nm
Dark current	ID	Vdd=5V Ev=0 Lux	-	-	0.1	μA
Photocurrent	IL(1)	Vdd=5V Ev=10 Lux	3.0	-	5.0	μA
Photocurrent	IL(1)	Vdd=5V Ev=30 Lux	9.0	-	15.0	μA
Photocurrent	IL(2)*	Vdd=5V Ev=100 Lux	30	40	50	μA
Rise time	Tr	VCE=5V IC=1mA RL=1000Ω	15	-	-	ms
Fall time	Tf	VCE=5V IC=1mA RL=1000Ω	15	-	-	ms