PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
 
The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.
PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85035-E’s superior linearity performance makes it an ideal solution for car mobile ro.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
 
RF Mosfet 13.6 V 150 mA 870MHz 16dB 15W PowerSO-10RF (Straight Lead)/ (formed lead)

Environmental & Export Classifications

 
Most Popular Power Field-Effect Transistors :PD85035