BWCD24L-04G BWCD24M-08 BWCK1EZH-32G-X BWCL1EZC-32G-X BWCK1EZC05-64G BWCK1KZC02-64G EPOP LPDDR4X IC Chips For Smart Wear AR/VR
BWCD24L-04G BWCD24M-08 EPOP LPDDR4X IC Chips For Smart Wear AR/VR
BWCD24L-04G
BWCD24M-08G
BWCK1EZH-32G-X
BWCL1EZC-32G-X
BWCK1EZC05-64G
BWCK1KZC02-64G
ePOP combines MMC and Mobile LPDDR in a single package, with different capacities. These products are widely used in mobile and wearable applications. With leading wafer packaging technologies, including advanced wafer grinding, lamination and wirebonding techniques, BIWIN integrates RAM and ROM in a single device, which not only improves performance and energy efficiency, but also saves space on printed circuit boards (PCB), thus shortening the development time for customers.
ePOP is an ideal solution for portable and wearable devices, such as smartphones, tablets, PMP, PDA and other media devices.
Application:
Smart Wear
AR/VR
Description:
ePoP LPDDR4X integrates LPDDR4X DRAM and eMMC 5.1 storage into a Package-on-Package (PoP) solution with a 144-ball FBGA package. With a compact size of just 8.00 x 9.50 mm, it achieves sequential read and write speeds up to 290 MB/s and 140 MB/s, with frequency up to 4266 Mbps. BIWIN ePoP LPDDR4X offers capacity up to 64 GB+32 Gb. It is a next-generation storage solution designed for high-end smartwatches. Compared to previous generations, this solution features a 128.6% increase in frequency, a 32% reduction in size, and is certified by the Qualcomm 5100 platform.
Specification:
| Interface | eMMC: eMMC 5.0 / eMMC 5.1 |
| LPDDR 2 / LPDDR 3: 32bit | |
| LPDDR 4 / LPDDR 4x: 16bit | |
| Dimensions | 10.0 × 10.00 mm (136b) |
| 8.00 × 9.50 mm (144b) | |
| 8.60 × 10.40 mm (144b) | |
| 12.00 × 13.00 mm (320b) | |
| Max. Sequential Read | eMMC: 320 MB/s |
| Max. Sequential Write | eMMC: 260 MB/s |
| Frequency | LPDDR 2 / LPDDR 3: 1200 MHz |
| LPDDR 4x: 1200 MHz - 1866 MHz | |
| Capacity | 4 GB + 4 Gb |
| 8 GB + 4 Gb / 8 GB + 8 Gb | |
| 16 GB + 8 Gb | |
| 32 GB + 16 Gb | |
| 64 GB + 16 Gb | |
| Working Voltage | eMMC: VCC=3.3 V, VCCQ=1.8 V |
| LPDDR 2 / LPDDR 3: VDD1=1.8 V, VDD2=VDDCA=VDDQ=1.2 V | |
| LPDDR 4: VDD1=1.8 V, VDD2=VDDQ=1.1 V | |
| LPDDR 4x: VDD1=1.8 V, VDD2=1.1 V, VDDQ=0.6 V | |
| Working Temperature | -20℃ - 85℃ |
| Approved Verification Platforms | SnapDragon Wear 3100 / 5100 |
| MSM8909W... | |
| Packaging | FBGA136 / FBGA144 / FBGA320 |
| Application | Smart Wear AR/VR |
Most Related Flash Memories IC:
| BWCMAQB11T08GI |
| BWCMAQB11T16GI |
| BWEFMI032GN2RJ |
| BWEFMI064GN223 |
| BWEFMI128GN223 |
| BWEFMA064GN1KC |
| BWEFMA128GN1KC |
| BWMZAX32H2A-16GI-X |
| BWMZCX32H2A-32GI-X |
| BWMEIX32H2A-48GI-X |
| BWMZCX32H2A-64GI-X |
| BWLGYA002GN6ZA |
| BWLGYA004GN6ZC |
| BWLGYA006GN6EI |
| BWLGYA008GN6ZC |
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.