Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF
IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products
N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea
Product Technical Specifications
| Part number | IRLR3915TRPBF |
| Base part number | IRLR3915 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
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Category
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Discrete Semiconductor Products
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Transistors - FETs, MOSFETs - Single
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Mfr
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Infineon Technologies
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Series
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HEXFET®
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Package
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Tape & Reel (TR)
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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55 V
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Current - Continuous Drain (Id) @ 25°C
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30A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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5V, 10V
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Rds On (Max) @ Id, Vgs
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14mOhm @ 30A, 10V
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Vgs(th) (Max) @ Id
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3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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92 nC @ 10 V
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Vgs (Max)
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±16V
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Input Capacitance (Ciss) (Max) @ Vds
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1870 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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120W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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D-Pak
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Product Number
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IRLR3915
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