IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A
IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs
Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs
---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A
Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:
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Category
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Discrete Semiconductor Products
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Transistors - FETs, MOSFETs - Single
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Mfr
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Infineon Technologies
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Series
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HEXFET®
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Package
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Tube
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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40 V
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Current - Continuous Drain (Id) @ 25°C
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180A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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3.7mOhm @ 75A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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150 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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4340 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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200W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220AB
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Package / Case
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TO-220-3
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Base Product Number
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IRF1404
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| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
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