MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G

Price Negotiable

Price: discussible

MOQ: discussible

Delivery Time: 1-7work days

Brand: original

Product Description

Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G

Products Description:

1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers

2.the material of product compliance withRoHS requirements and Halogen Free

3.S- prefix for automotive and other applications requiringunique site and control change requirements; AEC-Q101qualified and PPAP capable

4.RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ

5.RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ

6.Power management in note book Portable equipment Battery powered system Load switch DSC

MAXIMUM RATINGS(Ta = 25ºC)

Parameter	Symbol	Limits	Unit
Drain–Source Voltage	VDSS	-20	V
Gate–to–Source Voltage – Continuous	VGS	±8	V
Drain Current(Note 1) – Continuous TA = 25°C – Pulsed	ID IDM	-2 -10	A

THERMAL CHARACTERISTICS

Parameter	Symbol	Limits	Unit
Maximum Power Dissipation	PD	0.7	W
Thermal Resistance, junction–to–Ambient(Note 1)	RΘJA	175	C/W
Junction and Storage temperature	TJ, Tstg	−55∼+150	C

Technological Parameters:

Drain-source resistance	0.1 Ω
Polarity	P
Threshold voltage	0.4 V
Drain-source voltage (Vds)	20 V
Continuous drain current (Ids)	2.8A
Package	SOT-23-3
Minimum package	3000
RoHS Standard	RoHS Compliant
lead standard	Lead Free
pin number	6