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Products Description:

Small Signal MOSFET 60 V, 380 mA, Single N-Channel, SOT -23 Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement mode field effect transistors (FETs) are produced using Fairchild's patented high cell density DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching.

Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted

Technological Parameters: