IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W
Price:
discussible
MOQ:
discussible
Delivery Time:
1-7work days
Brand:
original
Product Description
NEW AND ORIGNAL IRLML6401 N-Channel MOSFET SOT23-3 IRLML6401TRPBF
Products Description:
MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V
Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R
Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W
These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized devicedesign that HEXFET® power MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable device for use in battery andload management.A thermally enhanced large pad leadframe has been incorporated into thestandard SOT-23 package to produce a HEXFET Power MOSFET with theindustry's smallest footprint. This package, dubbed the Micro3™, is ideal forapplications where printed circuit board space is at a premium. The low profile(<1.1mm) of the Micro3 allows it to fit easily into extremely thin applicationenvironments such as portable electronics and PCMCIA cards. The thermalresistance and power dissipation are the best available
Technological Parameters:
| Threshold voltage | 550 mV |
| input capacitance | 830 pF |
| Rated power | 1.3 W |
| polarity | P-Channel |
| Installation method | Surface Mount |
| pin number | 3 |
| package | SOT-23-3 |
| Operating temperature | -55℃ ~ 150℃ (TJ) |
| Packaging | Tape & Reel (TR) |
| Manufacturing applications | DC Switches |
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Company
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location
Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen
Contact Person
Coral