Semiconductor Epitaxial Film Crystal Substrate LiAlO2 Crystal Substrate
Semiconductor/Epitaxial/Film Crystal substrate LiAlO2 single crystal substrate
Lithium Aluminate(LiAlO2 ) single crystal with lower lattice mismatch rate to Gallium Nitride, Thus becoming a high-quality substrate material of gallium nitride film, A potential film substrate material of the III-V group nitride.
Properties:
| Crystal structure | M4 |
| Unit cell constant | a=5.17 A c=6.26 A |
| Melt point(℃) | 1900 |
| Density(g/cm3) | 2.62 |
| Hardness (Mho) | 7.5 |
| Polishing | Single or double or without |
| Crystal Orientation | ＜100＞ ＜001> |
Advantage:
1.Film Crystal substrate
2.Semiconductor Substrate
3.Epitaxial substrate
Product shots:
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.