ICs Chip MOSFETs NTH4L022N120M3S N-Channel 1200V 68A 352W Through Hole TO-247-4L
ICs Chip MOSFETs NTH4L022N120M3S N-Channel 1200V 68A 352W Through Hole TO-247-4L
Product Description Of NTH4L022N120M3S
NTH4L022N120M3S Silicon Carbide (SiC) MOSFETs are a family of 1200V M3S planar SiC MOSFETs. The NTH4L022N120M3S is optimized for fast-switching applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. These MOSFETs feature optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive.
Specification Of NTH4L022N120M3S
| Part Number: | NTH4L022N120M3S | FET Type: | N-Channel |
|---|---|---|---|
| Drain to Source Voltage (Vdss): | 1200V | Current - Continuous Drain (Id) @ 25°C: | 68A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V | Vgs(th) (Max) @ Id: | 4.4V @ 20mA |
Features Of NTH4L022N120M3S
- Typ. RDS(on) = 22 m @ VGS = 18 V
- Low Switching Losses (Typ. EON 490 J at 40 A, 800 V)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS Compliant with Exemption 7a,
- Pb−Free 2LI (on Second Level Interconnection)
Typical Applications Of NTH4L022N120M3S
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
Block Diagram Of NTH4L022N120M3S
Marking Diagram Of NTH4L022N120M3S
Other Supply Product Types
|
Part Number |
Package |
| PIC16LF873AT | QFN |
| CGY1047 | TO-59 |
| IRFB4110GPBF | TO-220 |
| UCC28810DR | SOP8 |
| MAX8903AETI | QFN28 |
|
LT1618EDD |
DFN10 |
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A: We are ISO 9001:2015 Certified Company and member of ERAI.
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A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
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Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
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