N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4
N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4
Product Description Of IMYH200R012M1H
IMYH200R012M1H is N-Channel MOSFETs Silicon Carbide Junction Transistor, Through Hole, package is TO-247-4.
Specification Of IMYH200R012M1H
| Part Number | IMYH200R012M1H |
|
FET Type
|
N-Channel
|
|
Technology
|
SiC (Silicon Carbide Junction Transistor)
|
|
Drain to Source Voltage (Vdss)
|
2000 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
123A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
15V, 18V
|
|
Rds On (Max) @ Id, Vgs
|
16.5mOhm @ 60A, 18V
|
Features Of IMYH200R012M1H
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 60A, 18V
- Vgs(th) (Max) @ Id: 5.5V @ 48mA
- Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 18 V
Other Electronic Components In Stock
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| TPS51220ARSNR | QFN32 |
| CM3202-00DE | QFN |
| 5AGZME1E3H29C4N | BGA |
| PSS30S92E6-AG | Module |
FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Get in Touch
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