TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power

TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power​

Product Description Of IMBG65R048M1H

IMBG65R048M1H is 650V CoolSiC M1 SiC Trench Power Device, Surface Mount.

Specification Of IMBG65R048M1H

Features Of​ IMBG65R048M1H

• Optimized switching be havior at higher currents
• Commutation robust fast body diode with low Qf
• Superior gate oxide reliability
• Tj,max=175°C and excellent thermal behavior

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.