N-Channel IMBG120R220M1H 1200V Silicon Carbide Trench TO-263-8 MOSFET Transistors

N-Channel IMBG120R220M1H 1200V Silicon Carbide Trench TO-263-8 MOSFET Transistors​

Product Description Of IMBG120R220M1H

IMBG120R220M1H is N-Channel 1200V CoolSiC™ Silicon Carbide Trench MOSFET Transistors with .XT interconnection technology.

Specification Of IMBG120R220M1H

Features Of IMBG120R220M1H

• Very low switching losses
• Short circuit withstand time 3 µs
• Benchmark gate threshold voltage, VGS(th) = 4.5V
• .XT interconnection technology for best-in-class thermal performance
• Package creepage and clearance distance > 6.1mm

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.