512Mbit Memory IC S26KS512SDPBHA020 NOR Flash Memory Chip 24-FBGA 166MHz Parallel​​

Product Description Of S26KS512SDPBHA020

S26KS512SDPBHA020 During wrapped operation, accesses start at a selected location and continue for a configured number of locations in a group wrap sequence.

Specification Of S26KS512SDPBHA020

Features Of S26KS512SDPBHA020

• Standby: 25 µA (typical), no wake-up required
• Deep Power-Down: 8 µA (typical)
• 300 µs wake-up required
• Read-write data strobe (RWDS)
• Configurable output drive strength
• Wrapped or linear burst type selected in each transaction
• HYPERFLASH™ memories use RWDS only as a Read Data Strobe

Other Electronic Components In Stock​

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.