IMT65R057M1H Silicon Carbide MOSFET Transistor 650V 57 mΩ in TOLL Package for High Power Density

IMT65R057M1H CoolSIC™ MOSFET 650 V, 57 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density.

CoolSIC™ MOSFET 650 V, 57 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 57 mΩ product suitable for high to mid power systems, with high efficiency targets.

It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems. It is also successfully used in interleaved topologies to address high efficiency targets in high power systems.