IMZC120R007M2H 1200V MOSFET Transistor Integrated Circuit Chip with PG-TO247-4 CoolSiC™ MOSFET Discrete

IMZC120R007 is a second-generation 1200V silicon carbide MOSFET discrete device from the CoolSiC™ series, housed in a 4-pin TO-247 package with high creepage distance.

Features Of IMZC120R007

VDSS = 1200 V at Tvj = 25°C
IDDC = 181 A at Tc = 25°C
RDS(on) = 7.5 mΩ at VGS = 18 V, Tvj = 25°C
Very low switching losses
Overload operation up to Tvj = 200°C
Short circuit withstand time 2 µs
Benchmark gate threshold voltage, VGS(th) = 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance

Applications Of IMZC120R007

Solid-state circuit breaker / Solid-state relay
EV Charging
Online UPS / Industrial UPS
String inverter
General purpose drives (GPD)
CAV
Servo drives

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