Application:
IPD25CN10N3G is an N-channel MOSFET suitable for efficient, low resistance power switching applications such as DC-DC converters, power management, platform power supplies, etc.
Conclusion:
IPD25CN10N3G has excellent on and off capabilities, enabling efficient power switching at high frequencies. Its low conduction resistance and low switching loss can effectively reduce power consumption and temperature rise, improve system efficiency and reliability.
Parameters:
Rated voltage: 100V
Maximum drain current: 25A
Drain source resistance: 3.3m Ω
Typical switching time: 20ns
Typical conduction time: 9.5ns
Static conduction voltage: 1.8V
Packaging: TO-252 (DPAK)
Packaging:
The IPD25CN10N3G adopts TO-252 (DPAK) packaging, which has the advantages of good heat dissipation performance and easy installation, making it suitable for use in limited space and high power density applications.