Application: IPD031N06L3G is a high voltage MOSFET transistor widely used in high-power switching power supplies, converters, motor drives, LED lighting and other fields.
Conclusion: IPD031N06L3G has excellent characteristics such as low resistance, high current withstand capacity, low switching loss, and high temperature performance, making it suitable for efficient power conversion circuits.
Parameters:
Drain Source voltage: 60V
Drain current: 100A
Typical resistance: 3.1m Ω
Input capacitance: 3742pF
Output capacitance: 891pF
Gate charge: 60nC
Gate source voltage: ± 20V
Packaging: TO-252 (D-Pak) packaging, size 6.5mm x 9.8mm x 4.6mm, suitable for manual and automatic welding.