Application:
IPD35N10S3L-26 is an N-channel MOSFET transistor mainly used in fields such as switching power supplies, three-phase motor drives, and electric tools.
Conclusion:
IPD35N10S3L-26 has the characteristics of low conduction resistance, high switching speed, and strong anti-static ability. It can operate normally under high temperature and voltage conditions, and has good reliability and stability.
Parameters:
Conduction resistance: 35m Ω (maximum)
Leakage current: 25 μ A (maximum value)
Gate source voltage: ± 20V
Rated current: 35A
Working temperature: -55 ℃ to 150 ℃
Packaging:
IPD35N10S3L-26 is packaged in TO-252 (DPAK), with dimensions of 6.6mm x 9.45mm x 2.2mm.
| Product Technical Specifications |
|
| |
|
| EU RoHS |
Compliant with Exemption聽 |
| ECCN (US) |
EAR99 |
| Part Status |
Unconfirmed |
| HTS |
8541.29.00.95 |
| SVHC |
Yes |
| SVHC Exceeds Threshold |
Yes |
| Automotive |
Yes |
| PPAP |
Unknown |
| Product Category |
Power MOSFET |
| Configuration |
Single |
| Process Technology |
OptiMOS |
| Channel Mode |
Enhancement |
| Channel Type |
N |
| Number of Elements per Chip |
1 |
| Maximum Drain Source Voltage (V) |
100 |
| Maximum Gate Source Voltage (V) |
卤20 |
| Maximum Continuous Drain Current (A) |
35 |
| Maximum Drain Source Resistance (mOhm) |
24@10V |
| Typical Gate Charge @ Vgs (nC) |
30@10V |
| Typical Gate Charge @ 10V (nC) |
30 |
| Typical Input Capacitance @ Vds (pF) |
2070@25V |
| Maximum Power Dissipation (mW) |
71000 |
| Typical Fall Time (ns) |
3 |
| Typical Rise Time (ns) |
4 |
| Typical Turn-Off Delay Time (ns) |
18 |
| Typical Turn-On Delay Time (ns) |
6 |
| Minimum Operating Temperature (掳C) |
-55 |
| Maximum Operating Temperature (掳C) |
175 |
| Supplier Temperature Grade |
Automotive |
| Packaging |
Tape and Reel |
| Mounting |
Surface Mount |
| Package Height |
2.26(Max) |
| Package Width |
6.22(Max) |
| Package Length |
6.73(Max) |
| PCB changed |
2 |
| Tab |
Tab |
| Standard Package Name |
TO-252 |
| Supplier Package |
DPAK |
| Pin Count |
3 |
| Lead Shape |
Gull-wing |
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