2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

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Delivery Time: The goods will be shipped within 3 days once received fund

Brand: TI

Product Description

2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Drain−Source Voltage	VDSS	60	Vdc
Drain−Gate Voltage (RGS = 1.0 MW)	VDGR	60	Vdc
Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2)	ID ID IDM	± 115 ± 75 ± 800	mAdc
Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient	PD RqJA	225 1.8 556	mW mW/°C °C/W
Total Device Dissipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient	PD RqJA	300 2.4 417	mW mW/°C °C/W
Junction and Storage Temperature	TJ, Tstg	− 55 to +150	°C