CSD13381F4 Low Resistance Mosfet Power Transistor N-CH Pwr Single Configuration

Price Negotiable

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Delivery Time: The goods will be shipped within 3 days once received fund

Brand: Ti

Product Description

CSD13381F4 Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET

1 Features

Low On-Resistance
Low Qg and Qgd
Low Threshold Voltage
Ultra-Small Footprint (0402 Case Size)

– 1.0mm×0.6mm
Ultra-Low Profile

– 0.35 mm Height

Integrated ESD Protection Diode
- – Rated >4 kV HBM
- – Rated >2 kV CDM
Lead and Halogen Free
RoHS Compliant

2 Applications

Optimized for Load Switch Applications
Optimized for General Purpose Switching Applications
Single-Cell Battery Applications
Handheld and Mobile Applications

3 Description

This 140 mΩ, 12 V N-channel FemtoFETTM MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	12		V
Qg	Gate Charge Total (4.5 V)	1060		pC
Qgd	Gate Charge Gate-to-Drain	140		pC
RDS(on)	Drain-to-Source On-Resistance	VGS = 1.8 V	310	mΩ
		VGS = 2.5 V	170	mΩ
		VGS = 4.5 V	140	mΩ
VGS(th)	Threshold Voltage	0.85		V

Ordering Information

Device	Qty	Media	Package	Ship
CSD13381F4	3000	7-Inch Reel	Femto (0402) 1.0 mm x 0.6 mm SMD Lead Less	Tape and Reel
CSD13381F4T	250	7-Inch Reel	Femto (0402) 1.0 mm x 0.6 mm SMD Lead Less	Tape and Reel

Absolute Maximum Ratings

TA = 25°C unless otherwise stated		VALUE	UNIT
VDS	Drain-to-Source Voltage	12	V
VGS	Gate-to-Source Voltage	8	V
ID	Continuous Drain Current, TA = 25°C(1)	2.1	A
IDM	Pulsed Drain Current, TA = 25°C(2)	7	A
IG	Continuous Gate Clamp Current	35	mA
IG	Pulsed Gate Clamp Current(2)	350	mA
PD	Power Dissipation(1)	500	mW
ESD Rating	Human Body Model (HBM)	4	kV
ESD Rating	Charged Device Model (CDM)	2	kV
TJ, Tstg	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID = 7.4 A, L=0.1mH,RG =25Ω	2.7	mJ