CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

Price Negotiable

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Delivery Time: The goods will be shipped within 3 days once received fund

Brand: Ti

Product Description

CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET

1 Features

Ultra-Low Qg and Qgd
Low Thermal Resistance
Low RDS(on)
Pb and Halogen Free
RoHS Compliant
SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

DC-DC Converters
Battery Management
Load Switch
Battery Protection

3 Description

This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-source voltage	–20		V
Qg	Gate charge total (–4.5 V)	7.5		nC
Qgd	Gate charge gate to drain	1.1		nC
RDS(on)	Drain-to-source on resistance	VGS = –1.8 V	74	mΩ
		VGS = –2.5 V	13.3	mΩ
		VGS = –4.5 V	7.7	mΩ
Vth	Threshold voltage	–0.9		V

Ordering Information(1)

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD25402Q3A	2500	13-Inch Reel	SON 3.3 mm × 3.3 mm Plastic Package	Tape and Reel
CSD25402Q3AT	250	7-Inch Reel	SON 3.3 mm × 3.3 mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-source voltage	–20	V
VGS	Gate-to-source voltage	+12 or –12	V
ID	Continuous drain current, TC = 25°C	–76	A
	Continuous drain current (package limit)	–35	A
	Continuous drain current(1)	–15	A
IDM	Pulsed drain current(2)	–148	A
PD	Power dissipation(1)	2.8	W
PD	Power dissipation, TC = 25°C	69	W
TJ	Operating junction temperature	–55 to 150	°C
Tstg	Storage temperature	–55 to 150	°C