FDMC6679AZ Mosfet Power Transistor MOSFET -30V P-Channel Power Trench

Features

• Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
• Max r = 18 mΩ at V = -4.5 V, I = -8.5 A DS(on) GS D
• HBM ESD protection level of 8 kV typical(note 3)
• Extended VGSS range (-25 V) for battery applications
• High performance trench technology for extremely low rDS(on)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant

General Description

The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Applications

• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management

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